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In a $p-n$ junction diode the thickness of depletion layer is $2 \times 10^{-6}\;m$ and barrier potential is $0.3\;V$. the intensity of the electric field at the junction is :

$\begin {array} {1 1} (a)\;0.6 \times 10^{-6}Vm^{-1}\;from\;n \;to \;P\;side & \quad (b)\;0.6 \times 10^{-6}Vm^{-1}\;from\;P \;to \;n\;side \\ (c)\;1.5 \times 10^{5}\;Vm{-1}\;from\;n\;to \;P\;side & \quad (d)\;1.5 \times 10^{-5}Vm^{-1}\;from\;P \;to \;n;side \end {array}$

$(c)\;1.5 \times 10^{5}\;Vm{-1}\;from\;n\;to \;P\;side$