Estimate the conductivity ($\sigma_i$) and resistivity ($\rho_i$) of silicon atoms and electron-hole pairs at room temperature of $300^{\circ}\;K$ if every 10-millionth silicon atom is replaced by an atom of Indium.

Question

Note: Concentration of atoms by Avogadro's Law, $n_A = 5 \times 10^{28} \text{atoms}\;m^{-3}$, Intrinsic concentration at room temperature is $1.5 \times 10^{16} \text{electron-hole pairs}\;m^{-3}$, Electron Mobility = $0.135\; m^2/V.s$ and Hole Mobility = $0.048\; m^2/V.s$