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JEEMAIN and NEET
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NEET PAST PAPERS
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2009
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Q)
A p–n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength :
( A ) 6000 Å
( B ) 496 Å
( C ) 6000 nm
( D ) 4000 nm
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