Consider a p-n junction as a capacitor, formed with p and n-materials acting as thin metal electron and depletion layer width acting as separation between them. Basing on this , assume that n-p-n transistor is working as an amplifier in CE configuration . If $C_1$ and $C_2$ are the base - emitter and collector- emitter junction capacitances, then:

Question

$$\begin {array} {1 1} (a)\;C_1 > C_2 & \quad (b)\;C_1 < C_2 \\ (c)\;C_1 =C_2 & \quad (d)\;C_1=C_2=0 \end {array}$$