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In Germanium it is found that concentration of conducting electron is 3×1019 per cubic meter. When Phosphorus impurity is doped the concentration of conducting electron increases to 2×1023 per cubic meter. If product of hole concentration and conducting electron is independent of amount of impurity find the hole concentration in doped Germanium.

(a)2.8×1015(b)4.5×1016(c)1.8×1016(d)4.5×1015
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