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Given ΔVBE= potential difference across base emitter, ΔIC= change in collector current, ΔIB= change in the base current and ΔRBE= change in base emitter resistance, which of the following best represents transconductance gm.

(a)ΔVBEΔIc(b)ΔRBEΔIc(c)ΔIcΔIB(d)ΔIcΔvBE

where

ΔVBE -Potential difference across base emitter

ΔIC- charge in collector current

ΔIB- change in base current

ΔRBE change in base- emitter resistance     

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