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Estimate the conductivity (σi) and resistivity (ρi) of silicon atoms and electron-hole pairs at room temperature of 300K if every 10-millionth silicon atom is replaced by an atom of Indium.

Note: Concentration of atoms by Avogadro's Law, nA=5×1028atomsm3, Intrinsic concentration at room temperature is 1.5×1016electron-hole pairsm3, Electron Mobility = 0.135m2/V.s and Hole Mobility = 0.048m2/V.s
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