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In an intrinsic semiconductor the energy gap Eg is 1.2ev . It hole mobility and independent of temperature . What is the ratio between conductivity at 600k and 300k Assume that the temperature dependence intrinic concentration ni is given by ni=n0exp(Eg2Kbt), Where no is a Constant and Kb=8.62×105ev/K

1.1×10511×1050.11×105noneoftheabove

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