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Questions >> CBSE XII >> Physics >> Semiconductor electronics

Truth table for the given circuit is

answered Jan 21, 2017 by vinaykumar.vaddi

2 answers

If each diode in the figure has a forward bias resistance of $25\;\Omega$ and infinite resistance in reverse bias , What will be the values of the current $I_1, I_2, I_3$ and $I_4$ ?

answered Jan 2, 2017 by meena.p

1 answer

A zener of power rating 1W is to be used as a voltage regulator . If Zener has a breakdown of $5V$ and it has to regulate the voltage which fluctuated between $3\;V$ and $7\;V$ , What should be the value of $R_s$ for Safe operation .

answered Jan 2, 2017 by meena.p

1 answer

In the circuit shown in the figure , if the diode forward voltage is $0.3\;V$ , the voltage difference between A and B is

answered Jan 1, 2017 by meena.p

1 answer

Write the truth table for the circuit below :

answered Jan 1, 2017 by meena.p

1 answer

Write the logical operation for the given circuit .

answered Jan 1, 2017 by meena.p

1 answer

Write the truth table for the circuit given

answered Jan 1, 2017 by meena.p

1 answer

Write the logic operation for the below circuit :

answered Jan 1, 2017 by meena.p

1 answer

write the truth table for the circuit below :

answered Jan 1, 2017 by meena.p

1 answer

Identify the exact logic operation carried out by the circuit below

answered Jan 1, 2017 by meena.p

1 answer

write the truth table for a NAND gate for the fig given

answered Jan 1, 2017 by meena.p

1 answer

In a npn transistor circuit, the collector current is $10\;mA$ . If $95\%$ of the electrons emitted reach the collector, Which of the following statements are true ?

answered Dec 31, 2016 by meena.p

1 answer

What happens during regulation action of a Zenerdiode ?

answered Dec 31, 2016 by meena.p

1 answer

A $220\;V$ A.C supply in connected between points A and B as shown in the figure . What will be the potential difference V across the capacitor ?

answered Dec 31, 2016 by meena.p

1 answer

The conductivity of a semiconductor increases with increases in temperature because:

answered Dec 31, 2016 by meena.p

1 answer

Write the logic operation for the circuit below :

answered Dec 31, 2016 by meena.p

1 answer

Identify the logic operation :

answered Dec 31, 2016 by meena.p

1 answer

You are given a circuit . Name the output gate

answered Dec 31, 2016 by meena.p

1 answer

You are given a circuit . Name the output gate

answered Dec 31, 2016 by meena.p

1 answer

In p-n junction diode , the current I , can be expressed $I= I_0 exp \bigg[ \large\frac{eV}{K_{B}T}-1 \bigg]$ Where $I_0$ is called the satiation current , V is the voltage across the dicode and in positive for forward bias and negative for reverse bias and I is the current through the dicode , $K_B$ is the BoHZmann constant $(8.6 \times 10^{-5}e^v/k)$ and T is the absolute temperature . If for a given diode $I_0 = 5 \times 10^{-12}A$ and $T=300\;K$ , then what will be the increase in the current if the voltage across the diode is increased to $0.7\;A$ ?what will be the Dynamic resistance

answered Dec 31, 2016 by meena.p

1 answer

In the circuit given below , when the input voltage of the base resistance is $10\;V,V_{BE}$ is zero. and $V_{CE}$ is also zero. Find the value of $I_c$ and $\beta$

answered Dec 31, 2016 by meena.p

1 answer

In the circuit given below , when the input voltage of the base resistance is $10\;V,V_{BE}$ is zero. and $V_{CE}$ is also zero. Find the value of $I_b$

answered Dec 31, 2016 by meena.p

1 answer

A p-n photo diode is fabricated from a semi - conductor with a band gap of $2.5 \;ev$ . It can detect a signal of wavelength

answered Dec 31, 2016 by meena.p

1 answer

The voltage gain of an amplifier with $9\%$ negative feed back is $10$ . The voltage gain with out feedback will be

answered Dec 31, 2016 by meena.p

1 answer

The decimal equivalent of the binary number $(11010.101)_2$ is

answered Dec 31, 2016 by meena.p

1 answer

An amplifier has a voltage gain $A_v= 1000$ The voltage gain $dB$ is

answered Dec 31, 2016 by meena.p

1 answer

In a common emitter transistor amplifier , the output resistance is $500 \;k \Omega$ and the current gain $\beta =49$ . If the power gain of the amplifier is $5 \times 10^6$ , the input resistance is

answered Dec 31, 2016 by meena.p

1 answer

In a transistor $\beta=49$ , then what percentage of charge carriers from emitter reach the collector ?

answered Dec 31, 2016 by meena.p

1 answer

A semiconductor has equal electron and hole concentration $6 \times 10^8\;m^{-3}$ . On doping with a certain impurity , electrons concentration increases to $8 \times 10^{12}m^{-3}$ . Identify the type of semiconductor after doping

answered Dec 31, 2016 by meena.p

1 answer

What is the order of energy gap in a semi-conductor ?

answered Dec 31, 2016 by meena.p

1 answer

give the ratio of number of numbers holes and number of conduction electrons in an intrinsic semi conductor

answered Dec 31, 2016 by meena.p

1 answer

In p-n junction diode , the current I , can be expressed $I= I_0 exp \bigg[ \large\frac{eV}{K_{B}T}-1 \bigg]$ Where $I_0$ is called the satiation current , V is the voltage across the dicode and in positive for forward bias and negative for reverse bias and I is the current through the dicode , $K_B$ is the Boltzmann constant $(8.6 \times 10^{-5}e^v/k)$ and T is the absolute temperature . If for a given diode $I_0 = 5 \times 10^{-12}A$ and $T=300\;K$ , then what will be the increase in the current if the voltage across the diode is increased to $0.7\;A$ ?

answered Dec 30, 2016 by meena.p

1 answer

In p-n junction diode , the current I , can be expressed $I= I_0 exp \bigg[ \large\frac{eV}{K_{B}T}-1 \bigg]$ Where $I_0$ is called the satiation current , V is the voltage across the dicode and in positive for forward bias and negative for reverse bias and I is the current through the dicode , $K_B$ is the Boltzmann constant $(8.6 \times 10^{-5}e^v/k)$ and T is the absolute temperature . If for a given diode $I_0 = 5 \times 10^{-12}A$ and $T=300\;K$ , then what will be the forward current at a forward voltage of $0.6\;V$ ?

answered Dec 30, 2016 by meena.p

1 answer

In an intrinsic semiconductor the energy gap $E_g$ is $1.2\;ev$ . It hole mobility and independent of temperature . What is the ratio between conductivity at $600\;k$ and $300\;k$ Assume that the temperature dependence intrinic concentration $n_i$ is given by $n_i = n_0 exp\bigg(\large\frac{-Eg}{2K_b t}\bigg)$ , Where $n_o$ is a Constant and $K_b= 8.62 \times 10^{-5} ev/K$

answered Dec 30, 2016 by meena.p

1 answer

The number of silicon atoms per $m^3$ is $5 \times 10^{28}$ This is doped simultaneously with $5 \times 10^{22}$ atom per $m^3$ of and $5 \times 10^{26}$ per $m^3$ atoms of indium . Calculate the number of electrons and holes . Given that $n_i=1.5 \times 10^{16}\;m^{-3}$ . material n -type or p type

answered Dec 30, 2016 by meena.p

1 answer

A P-n junction is fabricated from a semiconductor with band gap of $2.8\;ev$ can it detected a wavelength of $600\;nm$ ?

answered Dec 30, 2016 by meena.p

1 answer

Two amplifiers are connected one after the other in series (cascaded). The first amplifier has a voltage gain of $10$ and the second has a voltage gain of 20. If the input signal is $0.01\;V$ calculate the output a.c signal

answered Dec 30, 2016 by meena.p

1 answer

For a common emitter amplifier , the audio signal voltage across the collector resistance of $2\;HK \Omega$ is $2V$ . Suppose the current amplification factor of a transistor is 100, find the input signal voltage and base current , if the base resistance is $1\;k \;\Omega$

answered Dec 30, 2016 by meena.p

1 answer

What is the output frequency of a full wave rectifier if the input frequency is $50\;Hz$

answered Dec 30, 2016 by meena.p

1 answer

In half wave rectifier , what is the output frequency if the input frequency is $50\;Hz$ ?

answered Dec 30, 2016 by meena.p

1 answer

For tramister amplifier , the voltage gain ,

answered Dec 30, 2016 by meena.p

1 answer

For a transistor action, which of the following statements are correct ?

answered Dec 30, 2016 by meena.p

1 answer

When a forward bias is applied to p-n junction , it

answered Dec 30, 2016 by meena.p

1 answer

In an unbiased p-n junction , holes different from the p-region to n-region because

answered Dec 30, 2016 by meena.p

1 answer

Carbon, silicon, and germanium have four valence electrons each. These are characterized by valence and conduction bands. Seperated by energy band gap respectively equal to $(Eg)_e,(Eg)_{si}$ and $(Eg)_{Ge}$ . Which of the following statement is true ?

answered Dec 30, 2016 by meena.p

1 answer

Which of the statement in p-type silicon , which of the following statement is true?

answered Dec 30, 2016 by meena.p

1 answer

In n-type silicon , which of the following statement is true?

answered Dec 30, 2016 by meena.p

1 answer

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